BUZ11 n - channel 50v - 0.03 w - 30a -to-220 stripfet ? power mosfet n typical r ds(on) = 0.03 w n avalanche rugged technology n 100% avalanche tested n high current capability n 175 o c operating temperature applications n high current, high speed switching n solenoid and relay drivers n regulators n dc-dc & dc-ac converters n motor control, audio amplifiers n automotive environment (injection, abs, air-bag, lampdrivers, etc.) ? internal schematic diagram august 1998 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 50 v v dgr drain- gate voltage (r gs =20k w ) 50 v v gs gate-source voltage 20 v i d drain current (continuous) at t c =25 o c30a i dm drain current (pulsed) 120 a p tot total dissipation at t c =25 o c75w t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c din humidity category (din 40040) e iec climatic category (din iec 68-1) 55/150/56 first digit of the datecode being z or k identifies silicon characterized in this datasheet. type v dss r ds(o n) i d BUZ11 50 v < 0.04 w 30 a 1 2 3 to-220 1/6
thermal data r thj-case thermal resistance junction-case max 1.67 o c/w r t hj- amb thermal resistance junction-ambient max 62.5 o c/w avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d <1%) 30 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =25v) 200 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 50 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t j =125 o c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d =1ma 2.134v r ds(on) static drain-source on resistance v gs =10v i d = 19 a 0.03 0.04 w dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds =15v i d =19a 10 17 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 2100 260 65 pf pf pf switching symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on time rise time turn-off delay time fall time v dd =30v i d =18a r gs =50 w v gs =10v 40 200 220 110 ns ns ns ns BUZ11 2/6
electrical characteristics (continued) source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) 30 120 a a v sd ( * ) forward on voltage i sd =60a v gs =0 1.8 v t rr q rr reverse recovery time reverse recovery charge i sd =36a di/dt=100a/ m s v dd =30v t j =150 o c 75 0.24 ns m c ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % BUZ11 3/6
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times BUZ11 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c BUZ11 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1998 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. . BUZ11 6/6
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